The double-gate MOS has been introduced in MICROWIND for the simulation of non-volatile memories such as EPROM, EEPROM and FLASH. The command "UV exposure" erases floating gates and removes all electrons. The programming is performed by a very high voltage supply on the gate (7V in 0.12µm), a 1.2V voltage difference between drain and source. Some electrons are sufficiently accelerated to pass through the gate oxide by hot tunneling effect.